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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Diode WBFBP-03A DAN222E SWITCHING DIODE (1.6x1.6x0.5) unit: mm TOP DESCRIPTION Epitaxial planar Silicon diode FEATURES: High speed. (trr=1.5ns Typ.) Suitable for high packing density layout High reliability. APPLICATION Ultra high speed switching For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: N 1. ANODE 2. ANODE 3.CATHODE + + BACK + + - N ++ Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 Parameter Peak reverse voltage DC reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO PD Tj Tstg Limits 80 80 300 100 150 150 -55-150 Unit V V mA mA mW ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time Symbol V(BR) IR VF CD trr unless Test otherwise specified) MIN 80 0.1 1.2 3.5 4 MAX UNIT V conditions IR= 100A VR=70V IF=100mA VR=6V, f=1MHz VR=6V, IF=5mA A V pF ns Typical Characteristics DAN222E Sym bol A A1 b b1 D E D2 E2 e L L1 L2 L3 L4 k z D im e n s io n s In M illim e t e r s M in . M ax. 0 .4 5 0 0 .5 5 0 0 .0 1 0 0 .0 9 0 0 .2 3 0 0 .3 3 0 0 .3 2 0 R E F . 1 .5 5 0 1 .6 5 0 1 .5 5 0 1 .6 5 0 0 .7 5 0 R E F . 1 .0 0 0 R E F . 1 .0 0 0 T Y P . 0 .2 8 0 R E F . 0 .2 3 0 R E F . 0 .1 8 0 R E F . 0 .2 5 0 R E F . 0 .2 0 0 R E F . 0 .3 2 0 R E F . 0 .1 6 0 R E F . D im e n s io n s In In c h e s M in . M ax. 0 .0 1 8 0 .0 2 2 0 .0 0 0 0 .0 0 4 0 .0 0 9 0 .0 1 3 0 .0 1 3 R E F . 0 .0 6 1 0 .0 6 5 0 .0 6 1 0 .0 6 5 0 .0 3 0 R E F . 0 .0 4 0 R E F . 0 .0 4 0 T Y P . 0 .0 1 1 R E F . 0 .0 0 9 R E F . 0 .0 0 7 R E F . 0 .0 1 0 R E F . 0 .0 0 8 R E F . 0 .0 1 3 R E F . 0 .0 0 6 R E F . |
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